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Thin film MBE growth

Molecular Beam Epitaxy (MBE) is a very important technique to obtain high-quality thin film growth in ultra high vacuum (UHV) environment with monolayer (ML) control. MBE-grown thin film has been used widely either for academic research or the industrial high-tech products. In MBE, ultra-pure elements are heated to deposit epitaxially on the semiconductors, like gallium arsenide, indium phosphide, nitrides, silicon alloys (SiGe, SiC), diamond and other advanced materials (such as oxides, metals, ferroelectrics, superconductors).

The scientists in the YNJC have extensive expertises on MBE growth and MBE system development.